|Metal-organic chemical vapor deposition of silicon/zinc sulfide quantum confined structures - Bretschneider, Eric C.|
Keywords: Chemical vapor deposition; Organometallic compounds
|Global Chemical Vapor Deposition Market 2014 2018 - steve moore|
Analysts forecast the Global Chemical Vapor Deposition market to grow at a CAGR of 11.43 percent over the period 2013-2018. One of the key factors contributing to this market growth is the increasing demand for CVD in the Semiconductor industry. The Global Chemical Vapor Deposition market has also been witnessing the increasing use of plasma-enhanced CVD. However, the high total cost of ownership could pose a challenge to the growth of this market...
Keywords: Chemical Vapor Deposition market; Chemical Vapor Deposition industry; global Chemical Vapor Deposition; global Chemical Vapor Deposition industry; Chemical Vapour Deposition market; Chemical Vapour Deposition industry
|Metallization of CVD diamond using metal oxide intermediate layers for electronics packaging - Kroll, Darwin E|
Thesis advisors, Indranath Dutta and Sarath Menon
Keywords: METALS; ELECTRONIC EQUIPMENT; DIAMONDS; CHEMICAL VAPOR DEPOSITION; OXIDES; PACKAGING; METALLIZING
|Deposition of Diamond Films in A Closed Hot Filament Cvd System (Volume 100) - Lai, G.R.|
Journal of Research of the National Institute of Standards and Technology
Keywords: closed system; chemical vapor deposition; diamond films; scanning electron microscopy; x-ray diffraction
|PKS 2349-014: A Luminous Quasar With Thin Wisps, A Large Off-Center Nebulosity, and A Close Companion Galaxy - Bahcall, John N.|
Hubble Space Telescope (HST) images (WFC2) of PKS 2349-014 show that this luminous nearby quasar is interacting with diffuse (presumably galactic) material. Two thin wisps that have a total extent of about 20 kpc (for H0 = 100 km s(exp -1) and Omega0 = 1.0) are observed to approximately surround the quasar. One of the wisps appears to pass through a companion galaxy that is located at a projected distance of 3 kpc from the center of the quasar light...
Keywords: ALPHA PARTICLES; MAJORITY CARRIERS; METALORGANIC CHEMICAL VAPOR DEPOSITION; SILICON CARBIDES; SEMICONDUCTORS (MATERIALS); SPECTROSCOPIC ANALYSIS; IRRADIATION; DEFECTS; MINORITY CARRIERS; RADIATION TOLERANCE
|EOS--AM1 Nickel Hydrogen Cell Interim Life Test Report - Bennett, C. W.|
This paper reports the interim results of the Earth Observing System AM-1 project (EOS-AM-1) nickel hydrogen cell life test being conducted under contract to National Aeronautics and Space Administration (NASA) Goddard Space Flight Center (GSFC) at the Lockheed Martin Missiles and Space (LMMS) facility in East Windsor, NJ; and at COMSAT Labs., Clarksburg, MD. The purpose of the tests is to verify that the EOS-AM-1 cell design can meet five years of real-time Low Earth Orbit (LEO) cycling...
Keywords: METALORGANIC CHEMICAL VAPOR DEPOSITION; FLOW DISTRIBUTION; IMAGING TECHNIQUES; SEMICONDUCTORS (MATERIALS); REACTIVITY; EXPERIMENT DESIGN; MICROGRAVITY; LASER DOPPLER VELOCIMETERS; HEAT TRANSFER; GRAVITATIONAL EFFECTS; GALLIUM ARSENIDES; FLUID DYNAMICS; SCHLIEREN PHOTOGRAPHY
|Operating capability and current status of the reactivated NASA Lewis Research Center Hypersonic Tunnel Facility - Thomas, Scott R.|
The NASA Lewis Research Center's Hypersonic Tunnel Facility (HTF) is a free-jet, blowdown propulsion test facility that can simulate up to Mach-7 flight conditions with true air composition. Mach-5, -6, and -7 nozzles, each with a 42 inch exit diameter, are available. Previously obtained calibration data indicate that the test flow uniformity of the HTF is good. The facility, without modifications, can accommodate models approximately 10 feet long...
Keywords: METALORGANIC CHEMICAL VAPOR DEPOSITION; STEADY STATE; STOICHIOMETRY; VAPOR PHASES; VAPORIZERS; VOLATILITY; MICROGRAVITY; ORGANOMETALLIC COMPOUNDS; STABILITY; SUPERCONDUCTING FILMS; YBCO SUPERCONDUCTORS; FLOW VELOCITY; GAS FLOW; OXIDES
|Shuttle Net, Tuna Net - NON|
Rockwell International, NASA's prime contractor for the Space Shuttle, asked West Coast Netting (WCN) to develop a safety net for personnel working on the Shuttle Orbiter. This could not be an ordinary net, it had to be relatively small, yet have extraordinary tensile strength. It also had to be fire resistant and resistant to ultraviolet (UV) light. After six months, WCN found the requisite fiber, a polyester-like material called NOMEX...
Keywords: GALLIUM ARSENIDES; ELECTRIC POTENTIAL; METALORGANIC CHEMICAL VAPOR DEPOSITION; WAFERS; HIGH VOLTAGES; EPITAXY; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; SOLAR CELLS; SUBSTRATES; GERMANIUM; SILICON; CRYSTAL GROWTH; OPEN CIRCUIT VOLTAGE
|Commercialization and Industrial Development for the Fetal Hear Rate Monitor - Zahorian, Stephe|
The primary objectives for this task were to continue the development and testing of the NASA/ODU passive acoustic fetal heart rate monitor, with the goal of transferring the technology to the commercial sector. Areas of work included: 1. To assist in the development of a new hardware front end electronics box for the fetal heart rate monitor, so as to reduce the size of the electronics box, and also to provide for a ''low-frequency'' and ''high-frequency'' mode of operation...
Keywords: METALORGANIC CHEMICAL VAPOR DEPOSITION; THERMODYNAMIC EFFICIENCY; HIGH TEMPERATURE TESTS; ANNEALING; CRYSTALLINITY; COST REDUCTION; ELECTRON BEAMS; YTTRIUM OXIDES; ZIRCONIUM OXIDES; THERMAL CONTROL COATINGS; CERAMIC COATINGS; MICROSTRUCTURE; GAS TURBINE ENGINES; SPALLATION; OPERATING TEMPERATURE
|MIT6.774F04 - MIT OpenCourseWare|
This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new m...
Keywords: fabrication processes; silicon; integrated circuits; monolithic integrated circuits; physical models; bulk crystal growth; thermal oxidation; solid-state diffusion; ion implantation; epitaxial deposition; chemical vapor deposition; physical vapor deposition; refractory metal silicides; plasma and reactive ion etching; rapid thermal processing; process modeling; process simulation; technological limitations; integrated circuit design; integrated circuit fabrication; device operation; sige materials; processing